Photoelctrochemically Manufactured HgO/Cu2O Monolayer with Ameliorate Photovoltaic Features

Abstract

This writing report acquaint the chances for promoting efficiency betterment of p-Cu₂O electrode for PECs likewise in production of hydrogen gas, using HgO/Cu2O hetero-structure. The arrangement was accomplished by both bracing the surface of p-Cu₂O plate embattled through thermal oxidization of copper sheet and also acquiring low cost, effortless and low impairment engineering deposition for utilizing HgO as absorber layer. The altitudinous efficiency of 4.80% and open circuit voltage of 185MV were incurred in an HgO/Cu₂O hetero-structure PEC solar cell commence with copper foil thickness (0.1mm) substrate for preparing the Cu₂O thin film under oxygen gas pressure at 950℃ by thermal oxidizing techniques. It is requisite to augmented the interface at the hetero-structure junction to accomplished a soaring efficiency in HgO/Cu2O/HgO semiconductor beside multiplicative the parallel resistance and remittent the series resistance.
Keywords: thermal oxidation, cuprous oxide, hetero-structure, J-V characteristic, photoelectrochemical, annealing, etching.