Vol 15 No 1 (2014) - General
Effect of Thickness and Temperature of SiO2 Layer on Leakage Currents in MOS Capacitor Materials with High Dielectric Constant by Involving the Charge Trap AbstractPDF
ADDITIONAL MENUS
ARTICLE TEMPLATE
SUPLEMENTARY FILES
Cited by All Since 2019 Citation 1607 830 H-Index 21 13 i10-Index 39 22