Effect of Thickness and Temperature of SiO2 Layer on Leakage Currents in MOS Capacitor Materials with High Dielectric Constant by Involving the Charge Trap

  • Fatimah A. Noor Kelompok Keahlian Fisika Material Elektronik, Fakultas Matematika dan Ilmu Pengetahuan Alam, Institut Teknologi Bandung
  • Masturi Masturi
  • Mikrajuddin Abdullah Kelompok Keahlian Fisika Material Elektronik, Fakultas Matematika dan Ilmu Pengetahuan Alam, Institut Teknologi Bandung
  • Khairurrijal Khairurrijal Kelompok Keahlian Fisika Material Elektronik, Fakultas Matematika dan Ilmu Pengetahuan Alam, Institut Teknologi Bandung

Abstract

Modeling of the leakage current in a field-effect transistor metal-oxide-semiconductor (MOSFET) with high dielectric material has been developed by taking into account the effect of charge traps formed at the interface of high-k material/SiO2. Transmittance calculated using Airy wave function approach and involving the anisotropic electron mass and the effect of coupling between transverse and longitudinal energy represented by the speed of the electrons in the metal gate. Transmittance obtained is then used to calculate the leakage current in the structure of n+Poly-Si/HfSiOxN/trap/SiO2/p-Si for oxide voltage variations, temperature, and thickness of the SiO2. From the calculation that the leakage current decreases with decreasing of oxide voltage and increasing of the thickness of the oxide layer of SiO2. Also obtained that the temperature of the device does not give a great influence on the change of leakage current.

Keywords: Leakage current, electron speed, charge traps

Author Biography

Masturi Masturi
Jurusan Fisika, Fakultas Matematika dan Ilmu Pengetahuan Alam, Universitas Negeri Semarang
How to Cite
NOOR, Fatimah A. et al. Effect of Thickness and Temperature of SiO2 Layer on Leakage Currents in MOS Capacitor Materials with High Dielectric Constant by Involving the Charge Trap. Jurnal ILMU DASAR, [S.l.], v. 15, n. 1, p. 1-5, aug. 2014. ISSN 2442-5613. Available at: <https://jurnal.unej.ac.id/index.php/JID/article/view/642>. Date accessed: 02 june 2020. doi: https://doi.org/10.19184/jid.v15i1.642.
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General