Khairurrijal, Khairurrijal, Kelompok Keahlian Fisika Material Elektronik, Fakultas Matematika dan Ilmu Pengetahuan Alam, Institut Teknologi Bandung
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Vol 15 No 1 (2014) - General
Effect of Thickness and Temperature of SiO2 Layer on Leakage Currents in MOS Capacitor Materials with High Dielectric Constant by Involving the Charge Trap
Abstract PDF