Effect of MgO Buffer Layer on The Quality of ZnO Films Grown on C-Sapphire by Plasma-assisted MBE Method

  • Agus Setiawan
  • Takafumi Yao

Abstract

We have investigated the role of low temperature (LT)-MgO buffer layer on the quality of ZnO films grown on c-sapphirebyplasma-assistedmolecularbeamepitaxy(P-MBE)method. EffectofMgObufferthicknessand its annealing were evaluated. We found that surface morphology and crystalline quality of the ZnO layers were improved by controlling of the buffer layers. There is no improvement in morphology and crystalline quality of the ZnO layers if the buffer thickness is less than the critical thickness. The critical thickness is determined to be 1.5 nm. Furthermore, surface, structural, optical, and electrical qualities of the ZnO layers were improved by annealing MgO buffer at high temperature. Dislocation density of the ZnO layer was reduced from 5.3 x109 cm-2 to 1.9 x109 cm-2 by annealing the MgO buffer layer. The results indicate that we can engineer defect in highly mismatched heteroepitaxial using buffer layer.

Published
2011-07-31
How to Cite
SETIAWAN, Agus; YAO, Takafumi. Effect of MgO Buffer Layer on The Quality of ZnO Films Grown on C-Sapphire by Plasma-assisted MBE Method. Jurnal ILMU DASAR, [S.l.], v. 12, n. 2, p. 114-122, july 2011. ISSN 2442-5613. Available at: <https://jurnal.unej.ac.id/index.php/JID/article/view/57>. Date accessed: 04 july 2020.
Section
General

Keywords

Zinc-oxide; buffer layer; plasma-assisted molecular beam epitaxy