Built in Potential of a-Si:H Based p-i-n Solar Cell at Different Energy Gap of Intrinsic Layer

  • Rahayu Setyo Yuniarsih Department of Physics, Faculty of Mathematics and Natural Sciencs, University of Jember
  • Endhah Purwandari Department of Physics, Faculty of Mathematics and Natural Sciencs, University of Jember
  • Misto Misto Department of Physics, Faculty of Mathematics and Natural Sciencs, University of Jember
  • Edi Supriyanto Department of Physics, Faculty of Mathematics and Natural Sciencs, University of Jember
  • Supriyadi Supriyadi Department of Physics, Faculty of Mathematics and Natural Sciencs, University of Jember

Abstract

The photovoltaic process inside a solar cell can be described using the distribution of electrostatic potential in the material. In this paper, the magnitude of the electrostatic potential of the solar cell for the p-i-n junction type is analyzed as the built in potential due to the diffusion activity of electrons and holes. The magnitude of the electrostatic potential is obtained by solving the Poisson and Continuity equations, which are applied to a-Si: H based materials. The difference in built in potential at the p-i and i-n junctions is obtained as a function of the energy gap of the intrinsic layer.

Published
2018-11-10
How to Cite
YUNIARSIH, Rahayu Setyo et al. Built in Potential of a-Si:H Based p-i-n Solar Cell at Different Energy Gap of Intrinsic Layer. Computational And Experimental Research In Materials And Renewable Energy, [S.l.], v. 1, n. 1, p. 23-28, nov. 2018. Available at: <https://jurnal.unej.ac.id/index.php/CERiMRE/article/view/19547>. Date accessed: 28 nov. 2020. doi: https://doi.org/10.19184/cerimre.v1i1.19547.
Section
Articles