UTILIZATION Of Sn-Sb-S AS A NEW MATERIAL SENSITIZED SOLAR CELLS

Abstract

In this research process to observe the utilization of Sn-Sb-S for new material solar cells. With the SILAR (successive ionic layer adsorption and reaction) method, it was found that good conditions for growing quantum dots on the surface of TiO₂ were 8 turns to get Sn-S and 6 turns for SbS and heated at 325 0C for 12 minutes. As for tools to analyze Sn-Sb-S there are quantum dots by observing using XRD and the size of quantum dots. UV Visible is used to observe the gap energy of 1.63 eV which includes a wavelength of 300-850 nm. The use of SEM to observe the morphological characteristics of Sn-Sb-S on the surface of TiO₂ obtained the size of quantum dots ~ 16.6 nm. The best sample with ZnSe passivation layer resulted in short circuit current density Jsc of 14.04 mA/cm² open circuit voltage Voc of 0.46 V, fill factor FF of 39.91%, and power conversion efficiency η of 2.58% under 1 sun.

 Keywords: quantum dots, science materials, renewable energy