AROFAH, Siti Lailatul; 						PURWANDARI, Endhah; 						SUPRIYANTO, Edy.
 Simulation of I-V Characteristics of Si Diode at Difference Operating Temperature:Effect of  Ionized Impurity Scattering.
<strong>UNEJ e-Proceeding</strong>, [S.l.], p. 204-206, aug. 2017.
Available at: &lt;<a href="https://jurnal.unej.ac.id/index.php/prosiding/article/view/4197" target="_new">https://jurnal.unej.ac.id/index.php/prosiding/article/view/4197</a>&gt;. Date accessed: 22 dec. 2024.