Abdullah, Mikrajuddin, Kelompok Keahlian Fisika Material Elektronik, Fakultas Matematika dan Ilmu Pengetahuan Alam, Institut Teknologi Bandung

• Vol 15 No 1 (2014) - General
  Effect of Thickness and Temperature of SiO2 Layer on Leakage Currents in MOS Capacitor Materials with High Dielectric Constant by Involving the Charge Trap
  Abstract  PDF