GARESO, P L.
 Impurity Free Vacancy Disordering (IFVD) of InxGa1-xAs/InP Quantum Well Structures for Monolithic Integration of Different Optoelectronic Devices.
<strong>Jurnal ILMU DASAR</strong>, [S.l.], v. 11, n. 1, p. 23-30, jan. 2010.
ISSN 2442-5613.
Available at: &lt;<a href="https://jurnal.unej.ac.id/index.php/JID/article/view/103" target="_new">https://jurnal.unej.ac.id/index.php/JID/article/view/103</a>&gt;. Date accessed: 14 dec. 2024.