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 Effect of Temperature on The Electron Concentration of Crystalline GaAs Semiconductor Based on The p-n Junction Due to Deformation Potential Scattering.
<strong>Computational And Experimental Research In Materials And Renewable Energy</strong>, [S.l.], v. 2, n. 1, p. 35-44, may 2019.
ISSN 2747-173X.
Available at: &lt;<a href="https://jurnal.unej.ac.id/index.php/CERiMRE/article/view/20560" target="_new">https://jurnal.unej.ac.id/index.php/CERiMRE/article/view/20560</a>&gt;. Date accessed: 21 nov. 2024.
doi: <a href="https://doi.org/10.19184/cerimre.v2i1.20560">https://doi.org/10.19184/cerimre.v2i1.20560</a>.